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IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
- N-Channel Power MOSFET
- Continuous Drain Current (ID): 8A
- Gate threshold voltage (VGS-th) is 10V (limit = ?20V)
- Drain to Source Breakdown Voltage: 500V
- Drain Source Resistance (RDS) is 0.85 Ohms
- Rise time and fall time is 23nS and 20nS
- Available in To-220 package
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30.00EGP
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Description
IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 850 m? |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 125 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 9.01mm |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V |
| Minimum Operating Temperature | -55 ?C |
| Width | 4.7mm |
| Transistor Material | Si |
| Length | 10.41mm |
| Maximum Operating Temperature | +150 ?C |
Package Includes:
- 1x IRF840 MOSFET
Datasheet:
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